EM6M1T2R

$0.67

Description：MOSFET N/P-CH 30V/20V 0.1A EMT6
Series：-

SKU:7b66109db7cf Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

EM6M1T2R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N/P-CH 30V/20V 0.1A EMT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EM6M1T2R

Description：MOSFET N/P-CH 30V/20V 0.1A EMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V, 20V
Current - Continuous Drain (Id) @ 25°C：100mA, 200mA
Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：13pF @ 5V
Power - Max：150mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：EMT6
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for EM6M1T2R

EM6M1T2R

FET, MOSFET Arrays Overview

The EM6M1T2R is a dual complementary MOSFET array manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel silicon MOSFET into a single EMT6 (SOT-563) surface-mount package. The device supports low-voltage drive applications with a specified 2.5V drive capability. It features high-speed switching characteristics and includes built-in gate-source protection diodes for both channels. The N-channel element provides a drain-source breakdown voltage of 30V and a continuous drain current of ±0.1A, while the P-channel element offers a -20V breakdown voltage and a continuous drain current of ±0.4A. Total power dissipation is rated at 150mW.

FET, MOSFET Arrays Feature Summary

Integrates an N-channel and a P-channel MOSFET in a compact EMT6 package
Supports low-voltage drive operations at 2.5V
Features built-in gate-source protection diodes for enhanced reliability

FET, MOSFET Arrays Applications

General-purpose switching circuits
Low-voltage logic interface applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix T2R to confirm the tape-and-reel packaging format containing 8000 pieces per unit. Ensure that the component selection aligns with standard electronic equipment requirements rather than automotive or medical safety-critical systems, as these products are not designed for such environments.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a complementary pair within a six-terminal SMD footprint. Consider the 2.5V drive specification for compatibility with lower voltage logic families. Verify thermal derating requirements against the 150mW total power dissipation limit during circuit design.

FET, MOSFET Arrays Part Context

This part belongs to the EM6M1 series of 2.5V drive Nch+Pch MOSFETs from ROHM Semiconductor. It utilizes micro-processing technology to achieve low on-resistance within a small surface-mount form factor. The product line targets diverse market needs through various complementary configurations.