EMH1307-TL-H

$0.16

Description：MOSFET P-CH 20V 6.5A 8EMH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk

SKU:f91791d19128 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 6.5A 8EMH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：26mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-EMH
Package / Case：8-SMD, Flat Leads

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EMH1307-TL-H

Overview

The EMH1307-TL-H is a single P-channel power MOSFET from onsemi, housed in an EMH8 surface-mount package. It features a drain-to-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -6.5 A at 25°C. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 20 mΩ at V_GS = -4.5 V and I_D = -3 A. Key electrical characteristics include a total gate charge (Q_g) of 13 nC at V_GS = -4.5 V and an input capacitance (C_iss) of 1100 pF. The component supports logic-level driving with a specified drive voltage of 1.8 V and includes an integrated protection diode.

Feature Summary

Single P-channel configuration with integrated body diode for efficient switching applications
Logic-level gate drive capability optimized for low-voltage control signals
Low on-state resistance to minimize conduction losses in power paths
Halogen-free compliance ensuring adherence to environmental standards

Applications

DC-DC converter synchronous rectification stages
Motor driver high-side switches
Power management circuits requiring low-voltage logic interface

Procurement Notes

Verify the specific ordering suffix TL-H to confirm tape-and-reel packaging and halogen-free status. Confirm that the EMH8 package dimensions align with the target PCB land pattern. Ensure design margins account for the maximum allowable power dissipation limits under actual thermal conditions rather than ideal substrate assumptions.

Selection Notes

Select this component when a single P-channel switch with -20 V rating and approximately -6.5 A current capacity is required. The low R_DS(on) makes it suitable for efficiency-critical designs. Verify compatibility with the system's gate drive voltage levels, as the device is characterized for operation at -1.8 V, -2.5 V, and -4.5 V.

Part Context

This part belongs to onsemi's EMH series of surface-mount power MOSFETs. The EMH8 package provides a compact footprint suitable for dense PCB layouts. The device utilizes silicon technology and is designed for general-purpose power switching applications where size and efficiency are prioritized.