EMH2418R-TL-H

FET, MOSFET Arrays Overview

The EMH2418R-TL-H is a dual N-channel Power MOSFET manufactured by onsemi, housed in an EMH-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 11 A. The device exhibits a low on-resistance (Rds(on)) of 8 mΩ per channel. Gate specifications include a threshold voltage (Vgs(th)) of 500 mV, a gate charge (Qg) of 16 nC, and a maximum gate-source voltage (Vgs) range of ±12 V. Thermal performance includes a power dissipation (Pd) of 1.3 W, with an operating temperature range from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode transistors within a single compact footprint.

FET, MOSFET Arrays Applications

• Low-voltage DC-DC converter circuits requiring high current handling.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS and REACH directives relevant to the manufacturing region. Validate that the part number corresponds to the exact electrical characteristics required for the target design.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is necessary for synchronous rectification or half-bridge applications at 12 V levels. The low Rds(on) minimizes conduction losses, while the small EMH-8 package supports space-constrained designs. Evaluate thermal management requirements based on the 1.3 W power dissipation rating under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's family of low-voltage, high-current dual MOSFETs designed for efficient power switching. The EMH-8 package provides a balance between thermal performance and board space efficiency compared to larger discrete packages.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N-channel MOSFETs featuring 12 V Vds, 11 A Id, and 8 mΩ Rds(on) in comparable SMD packages. Verify pinout compatibility and thermal resistance values before substitution.