EMT1DXV6T1G

$0.40

Description：TRANS 2PNP 60V 100MA SOT-563
Series：-

SKU:ca4d2088941b Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 60V 100MA SOT-563
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
Power - Max：500mW
Frequency - Transition：140MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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EMT1DXV6T1G

Overview

The EMT1DXV6T1G is a dual general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. It is housed in the SOT-563 surface-mount package designed for low power applications. The device features a maximum collector-emitter voltage of -60 V and a continuous collector current of -100 mA dc. Electrical characteristics include a minimum DC current gain (hFE) of 120 at -1.0 mA, with a typical transition frequency of 140 MHz. Thermal performance specifies a total device dissipation of 357 mW at 25°C for one heated junction. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Dual PNP configuration integrated into a single compact SOT-563 package
Low saturation voltage capability for efficient switching
Lead-free solder plating compliant with RoHS standards

Applications

General purpose amplifier circuits
Low power surface mount applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'T1G' designation indicates a tape and reel quantity of 4000 units. Confirm that the NSV prefix variant meets automotive site control requirements if applicable. Ensure compatibility with standard SMD/SMT assembly processes for the SOT-563 case outline.

Selection Notes

Select this component for designs requiring dual PNP transistors in a minimal footprint. Verify that the -60 V collector-emitter rating exceeds the circuit's peak voltage requirements. Check thermal constraints against the 357 mW dissipation limit at ambient temperatures above 25°C. Ensure base drive currents remain within the specified limits for the desired hFE performance.

Part Context

This part belongs to the EMT1DXV6 series of dual general-purpose transistors. It shares the same electrical specifications as the discontinued EMT1DXV6T5G but utilizes a different packaging format. The NSVEMT1DXV6T1G variant offers AEC-Q101 qualification for automotive use.