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The EMT1DXV6T5G is a dual general-purpose PNP transistor housed in an SOT-563 package. It features a collector-emitter voltage of -60 V and a continuous collector current of -100 mA. The device exhibits a maximum collector-emitter saturation voltage of -0.5 V at specified test conditions. Electrical characteristics include a DC current gain ranging from 120 to 560, a transition frequency of 140 MHz typical, and an output capacitance of 3.5 pF. Thermal performance specifies a total device dissipation of 357 mW for one junction heated and 500 mW for both junctions heated at 25°C ambient temperature.
Verify component status before procurement as the EMT1DXV6T5G is listed as discontinued in the July 2025 revision history. Confirm availability through onsemi representatives or authorized distributors. Ensure ordering suffixes match specific packaging requirements such as tape and reel quantities. Check for NSV prefix variants if automotive qualification is required.
Select this component for general purpose amplification where low power consumption is critical. The SOT-563 package suits space-constrained surface mount layouts. Evaluate thermal resistance limits when designing for high ambient temperatures. Consider the discontinuation status when planning long-term production runs.
This part belongs to the EMT1DXV6 series of dual PNP transistors manufactured by onsemi. It shares electrical specifications with other suffixes like T1G but differs in packaging quantity. The device utilizes the CASE 463A outline standard for its physical dimensions.
Consult onsemi representatives for current alternatives due to the discontinued status of the EMT1DXV6T5G. Verify pinout compatibility and electrical parameters when evaluating substitute components.
The maximum collector-emitter voltage (VCEO) is rated at -60 V.
Yes, the NSV prefix variant is AEC-Q101 qualified and PPAP capable for automotive applications.
The typical transition frequency (fT) is 140 MHz under specified test conditions.