EMX1DXV6T1

Overview

The EMX1DXV6T1 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 60 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 500 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1 mA and 6 V, and a transition frequency (fT) of 180 MHz. The saturation voltage is specified at 400 mV under standard test conditions. It operates within a temperature range of -55°C to +150°C TJ.

Feature Summary

• Dual NPN configuration in a compact SOT-563 surface-mount package for space-constrained designs.
• High-speed switching capability with a transition frequency of 180 MHz suitable for general-purpose applications.
• Robust thermal performance with a maximum junction temperature rating of 150°C.

Applications

• General-purpose switching circuits
• Signal amplification stages
• Logic interface buffers

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Check for RoHS compliance status as the original EMX1DXV6T1 may be obsolete; confirm if the G-suffix variant is required for regulatory adherence. Validate lot traceability and ensure storage conditions meet moisture sensitivity level requirements prior to assembly.

Selection Notes

Select this component when a dual NPN topology is required in a small outline package. Ensure the 50 V VCEO rating meets circuit voltage headroom needs. Compare hFE and fT specifications against alternative BJT arrays if higher gain or speed is necessary. Verify that the 500 mW power dissipation aligns with thermal management capabilities in the target application environment.

Part Context

The EMX1DXV6T1 belongs to the EMX1 series of dual NPN transistors from onsemi. This series is designed for efficient signal processing and switching tasks. The part utilizes silicon technology and is housed in a lead-free SOT-563 package. It serves as a foundational discrete semiconductor component for analog and digital circuit implementations requiring matched dual transistor pairs.

Replacement Considerations

The EMX1DXV6T1G is listed as a direct replacement for the EMX1DXV6T1. Verify pinout compatibility and electrical parameter equivalence before substitution. Confirm that the G-suffix variant meets any specific environmental or regulatory requirements not present in the original non-compliant version.