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The EMZ1DXV6T1G is a dual bipolar junction transistor array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 100mA. Power dissipation is rated at 500mW. The transition frequency reaches 180MHz for the NPN section and 140MHz for the PNP section. DC current gain is specified at a minimum of 120 at 1mA and 6V. Saturation voltages are limited to 400mV (NPN) and 500mV (PNP) under specific drive conditions. Operating temperature spans from -55°C to +150°C.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches the specific manufacturing lot. Check for alternative sourcing options as the manufacturer has indicated discontinuation. Ensure storage conditions adhere to moisture sensitivity level 1 requirements prior to assembly.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare power dissipation ratings against thermal constraints of the target PCB layout. Evaluate transition frequency specifications against the highest operating frequency of the application circuit. Verify that the 60V breakdown voltage exceeds the maximum transient voltages present in the system.
This part belongs to the EMZ1 series of dual bipolar transistor arrays from onsemi. It serves as a compact solution for replacing discrete transistor pairs in digital and analog switching circuits. The SOT-563 package allows for automated surface-mount assembly, reducing board space compared to individual components.
Public confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases for cross-reference data regarding discontinued inventory management.