EPC2001

Description：GANFET N-CH 100V 25A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)

SKU:13fe6c5ffd4f Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 25A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 5 V
Vgs (Max)：+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 125°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2001

Overview

The EPC2001C is an enhancement mode Gallium Nitride Field-Effect Transistor (eGaN® FET) manufactured by Efficient Power Conversion. It features an N-channel configuration with a drain-to-source voltage rating of 100 V and a continuous drain current capacity of 36 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 7 mΩ at 25 A and 5 V gate drive, alongside a maximum gate charge of 9 nC at 5 V. Input capacitance is specified at 900 pF under 50 V conditions. The component operates within a junction temperature range of -40°C to 150°C and utilizes a surface-mount die package.

Feature Summary

Utilizes eGaN technology for enhanced switching performance compared to traditional silicon devices
Features low on-resistance to minimize conduction losses during operation
Designed for high-speed switching applications with minimal gate charge requirements

Applications

Pulsed laser diode drivers requiring high peak currents
Class E power amplifiers
High-efficiency DC-DC converters

Procurement Notes

Verify the specific suffix designation when ordering, as packaging options include Tape & Reel, Cut Tape, and Digi-Reel. Confirm that the required part number corresponds to the EPC2001C variant rather than other members of the EPC20 series family. Ensure compatibility with the intended mounting process for bare die components.

Selection Notes

Select this component for designs requiring ground-referenced switching with high current pulse capabilities up to 150 A in compatible evaluation platforms. Consider the 100 V breakdown voltage and 36 A continuous current limits against thermal management constraints. Evaluate the 5 V drive requirement for gate driver compatibility.

Part Context

This device belongs to the EPC eGaN® FET product line, specifically the EPC20 series base product number. It represents a generation of gallium nitride transistors designed to replace silicon MOSFETs in high-frequency power conversion applications. The component is distinct from configuration memory or RFID identification codes also associated with the EPC acronym.