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Product Detailed Parameters
- Description：GANFET N-CH 100V 36A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2001C is a 100 V enhancement mode eGaN FET designed for high-current pulsed applications. It features a pulse current rating of up to 150 A, making it suitable for driving laser diodes with total pulse widths as low as 5 ns (10% of peak). The device is optimized for minimal power loop inductance and supports ground-referenced configurations. It serves as an upgrade option for boards like the EPC9126, offering higher current capability compared to standard variants such as the EPC2016C.
Feature Summary
- Capable of handling high current pulses up to 150 A
- Optimized for ultra-short pulse widths down to 5 ns
- Designed for minimal power loop inductance
- Supports ground-referenced switching configurations
Applications
- Pulsed laser diode drivers requiring high peak currents
- Class E amplifiers
- High-speed ground-referenced switching circuits
Procurement Notes
Verify that the specific package type matches your PCB footprint requirements. Confirm thermal management capabilities align with your duty cycle and ambient temperature conditions. Ensure gate drive voltage specifications are compatible with your controller. Check for any specific handling or storage precautions related to the eGaN technology.
Selection Notes
Select this component when application demands exceed the 75 A limit of lower-rated counterparts like the EPC2016C. Consider its suitability for designs prioritizing fast switching speeds and low inductance. Evaluate if the 100 V breakdown voltage meets system voltage headroom needs. Compare thermal resistance values against available heatsinking options.
Part Context
This device belongs to the Enhanced Gallium Nitride (eGaN) field effect transistor family from Efficient Power Conversion (EPC). It represents a high-performance variant within their portfolio, specifically engineered for demanding pulsed power applications where rapid switching and high peak currents are critical. It complements development boards like the EPC9126.
Replacement Considerations
The EPC2016C is a documented alternative for lower current requirements (up to 75 A). Verify pinout compatibility and thermal characteristics before substitution. No other direct public substitutes are confirmed.
