EPC2007C

$2.62

Description：GANFET N-CH 100V 6A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6ee23a16c25e Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 6A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2007C

Overview

The EPC2007C is a 100 V rated enhancement-mode gallium nitride field-effect transistor (eGaN® FET) manufactured by Efficient Power Conversion. It features a maximum drain-to-source voltage of 100 V, a continuous drain current of 6 A at 25°C, and an on-resistance of 30 mΩ. The device utilizes lateral GaN technology grown on silicon wafers, leveraging standard CMOS processing infrastructure. Key electrical characteristics include exceptionally low gate charge and zero reverse recovery charge due to its majority carrier diode structure.

Feature Summary

Zero reverse recovery charge resulting from the lateral device structure and majority carrier diode
Low gate charge enabling high switching frequency operation with minimal on-time losses
Lateral device architecture compatible with standard CMOS manufacturing equipment

Applications

Zero Voltage Switching (ZVS) Class-D amplifiers for wireless power transfer systems
Grid-connected inverter supplies in distributed generation plants
High-efficiency DC-DC converters requiring fast switching speeds

Procurement Notes

Verify the specific suffix 'C' against official datasheets to confirm pinout and thermal specifications. Ensure compatibility with gate drivers designed for eGaN FETs. Confirm operating temperature ranges align with application requirements. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component for applications demanding high efficiency at elevated frequencies. The 100 V rating suits intermediate voltage levels in power conversion. Consider the low thermal coefficient for stable performance under varying loads. Evaluate board layout constraints for optimal heat dissipation given the package type.

Part Context

The EPC2007C belongs to the eGaN FET family, which integrates Gallium Nitride power transistors on silicon substrates. This technology combines the electron mobility advantages of GaN with the cost benefits of silicon wafer processing. The product line targets high-frequency power electronics where traditional silicon MOSFETs face efficiency limitations.