EPC2010

Description：GANFET N-CH 200V 12A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)

SKU:3fbaed7b2926 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 200V 12A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 125°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2010

Overview

The EPC2010 is a Gallium Nitride Field-Effect Transistor (GaN FET) manufactured by Efficient Power Conversion Corporation. It is an enhancement-mode, n-channel device designed for high-efficiency power conversion applications. The component features a 200V drain-source voltage rating and supports a continuous drain current of 12A at 25°C ambient temperature. Key electrical characteristics include a maximum on-resistance of 25mΩ at 6A with a 5V gate drive, a threshold voltage of 2.5V, and a gate charge of 7.5nC. The device operates within a junction temperature range of -40°C to 125°C.

Feature Summary

Utilizes eGaN technology for enhanced switching performance
Enhancement-mode operation ensures safe turn-off
Low on-resistance minimizes conduction losses
Bumped die package facilitates surface mount integration

Applications

High-frequency DC-DC converters
Power factor correction circuits
Isolated power supply topologies

Procurement Notes

Verify the specific revision suffix when ordering, as variations may exist between standard and C-rated versions. Confirm availability status directly with the manufacturer or authorized distributors, as lead times and stock levels fluctuate. Ensure that the bumped die form factor aligns with the target PCB footprint and assembly capabilities before finalizing procurement plans.

Selection Notes

Select this component for designs requiring low thermal resistance and high current density in a compact form factor. Evaluate the gate drive requirements against the specified 5V optimal drive voltage to ensure efficient switching. Consider the 200V breakdown voltage relative to the system's peak voltage stresses to maintain adequate safety margins during transient conditions.

Part Context

The EPC2010 belongs to the eGaN FET family from Efficient Power Conversion Corporation, which focuses on next-generation power semiconductors. This series replaces traditional silicon MOSFETs in many applications, offering superior speed and efficiency. The part is identified as a discrete transistor intended for direct integration into power stages rather than as part of a pre-packaged module.