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Product Detailed Parameters
- Description：GANFET N-CH 200V 3A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：100mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 5 V
- Vgs (Max)：+6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：145 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2012 is an enhancement mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a maximum drain-source voltage rating of 100 V and a continuous drain current capacity of 3.4 A at ambient temperature. The device utilizes a die package configuration designed for surface-mount integration into high-frequency power conversion circuits.
Feature Summary
- Enhancement mode operation utilizing gallium nitride technology
- Integrated thermal management via exposed pad die structure
- Optimized for low on-resistance in half-bridge configurations
Applications
- Evaluation as the primary switching element in the EPC9004C development board
- High-efficiency synchronous rectification stages
- High-frequency DC-DC converter topologies
Procurement Notes
Verify the specific suffix or revision code against the manufacturer's latest datasheet to ensure compatibility with intended gate drive requirements. Confirm that the procurement channel provides authentic components from Efficient Power Conversion or authorized distributors to avoid counterfeit devices. Check for any recent design-for-manufacturing updates that may affect pinout or thermal characteristics.
Selection Notes
Select this component when designing systems requiring a 100 V rated eGaN switch with moderate current handling capabilities. Ensure the application circuit includes appropriate gate drive protection, as the device operates in enhancement mode. Consider the thermal resistance of the die package when determining heat dissipation strategies for continuous operation at rated currents.
Part Context
The EPC2012 belongs to the EPC20 series of eGaN FETs, representing a generation of silicon carbide-free power switches. It serves as a foundational component for evaluating next-generation power electronics, specifically enabling the demonstration of high-speed switching advantages over traditional silicon MOSFETs in compact form factors.
Replacement Considerations
Consult the official EPC cross-reference guide for direct replacements. The EPC2016C is documented as a compatible alternative within similar evaluation boards, offering comparable voltage ratings with different current capabilities.
