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Product Detailed Parameters
- Description：GANFET N-CH 40V 10A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 5 V
- Vgs (Max)：+6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2014 is a second-generation eGaN FET from EPC, designed for high-frequency applications. It features an N-Channel GaNFET technology with a drain-source voltage (Vdss) of 40 V and a continuous drain current of 10 A. The device has a maximum on-resistance (RDS(ON)) of 16 mΩ at a gate voltage of 5 V. The active area is 1.87 square millimeters, and the maximum junction temperature rating is 150°C. The component is available in a die outline package.
Feature Summary
- Enhanced switching speed resulting in lower switching losses and reduced drive power requirements
- Higher efficiency achieved through minimized conduction and switching losses alongside zero reverse recovery charge
- Compact footprint enabling higher power density in power conversion designs
Applications
- High-frequency power circuits
- Power conversion systems requiring high power density
- Applications benefiting from fast switching speeds and low thermal resistance
Procurement Notes
Verify component status as discontinued by major distributors like Digi-Key. Confirm availability through alternative channels or authorized secondary markets. Ensure compatibility with existing design parameters before procurement. Check for valid replacement options such as the EPC2014C if original supply is unavailable. Validate authenticity and storage conditions due to potential age of stock.
Selection Notes
Select this component for designs prioritizing high frequency and compact size. Consider the 40 V rating and 10 A current capability for suitable load requirements. Evaluate the 16 mΩ RDS(ON) for efficiency needs at 5 V gate drive. Assess thermal management capabilities given the 150°C junction limit. Compare against previous generations like EPC1014 for performance improvements.
Part Context
The EPC2014 belongs to EPC's second-generation eGaN FET series, succeeding models like the EPC1014. It represents an advancement in Gallium Nitride technology, offering improved electrical characteristics and thermal performance. The device is part of a lineage focused on enhancing power density and switching efficiency in modern electronic systems.
Replacement Considerations
The EPC2014C is listed as a direct substitute. Verify pinout and parameter equivalence before integration. Ensure the replacement meets all original design specifications regarding voltage, current, and thermal limits.
