EPC2016C

$2.89

Description：GANFET N-CH 100V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7a43d4170c1c Category: Single FETs, MOSFETs Brand: EPC

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：420 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Download product information

EPC2016C

Overview

The EPC2016C is a ground-referenced enhancement mode eGaN field effect transistor (FET) manufactured by Efficient Power Conversion. It features a maximum device voltage of 100 V and is capable of handling current pulses up to 75 A. The component is designed for high-speed switching applications, including pulsed laser diode drivers where total pulse widths can be as low as 5 ns. It serves as the primary switching element in evaluation boards such as the EPC9126.

Feature Summary

Enhancement mode eGaN technology providing high-speed switching capabilities
Ground-referenced configuration simplifying gate drive requirements
High peak current pulse capability suitable for demanding transient loads

Applications

Pulsed laser diode driver circuits
Class E amplifiers
Ground-referenced power output stages

Procurement Notes

Verify the specific package type and tape-and-reel specifications against the manufacturer's latest datasheet before ordering. Confirm that the 100 V rating aligns with your system's maximum operating voltage. Ensure thermal management solutions are adequate for the intended duty cycle and ambient conditions. Check for any recent revisions to the part number suffix that may indicate updated testing or packaging standards.

Selection Notes

Select this component when a ground-referenced switch is required for high-current pulsed applications. The 100 V breakdown voltage provides headroom for standard bus voltages. Consider the thermal resistance characteristics if continuous conduction is expected, though the device is optimized for pulsed operation. Evaluate compatibility with standard gate drivers like the UCC27611 used in reference designs.

Part Context

The EPC2016C belongs to the eGaN FET family from Efficient Power Conversion, which utilizes gallium nitride semiconductor technology. This family is characterized by low on-resistance and fast switching speeds compared to traditional silicon MOSFETs. The device is commonly integrated into development kits for evaluating high-efficiency power conversion topologies.