EPC2024

Overview

The EPC2024 is an enhancement mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a maximum drain-to-source voltage of 40 V and a typical on-resistance of 1.5 mΩ. The device supports a continuous drain current of 60 A and a pulsed drain current of 90 A. It operates with a junction temperature rating up to 150°C and is available in a surface-mount die package.

Feature Summary

• Enhancement mode operation for direct drive compatibility
• Low on-resistance for high efficiency power conversion
• High thermal stability with 150°C junction temperature rating

Applications

• DC-DC converters
• Motor drivers
• Power supplies

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing, as packaging or testing configurations may vary. Confirm RoHS compliance status and halogen-free designation directly with the manufacturer or authorized distributors to ensure adherence to environmental regulations required for your specific assembly process.

Selection Notes

Select this component for applications requiring low conduction losses at 40 V bus voltages. Ensure gate drive circuits are compatible with eGaN FET requirements. Verify that the thermal management solution can handle the specified power dissipation at the intended operating frequency and ambient conditions.

Part Context

This part belongs to the EPC eGaN FET family, designed to replace silicon MOSFETs in high-frequency power applications. It utilizes gallium nitride technology to achieve superior performance metrics compared to traditional silicon devices in similar voltage classes.

Replacement Considerations

Direct pin-compatible replacements within the same voltage class include the EPC2034. Verify gate drive compatibility and thermal characteristics before substituting.