EPC2030ENGRT

Description：GANFET NCH 40V 31A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)

SKU:ddd480c78fec Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET NCH 40V 31A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：31A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2030ENGRT

Overview

The EPC2030ENGRT is an N-channel enhancement mode Gallium Nitride Field-Effect Transistor (GaN FET) die supplied in passivated form. It features a Drain-to-Source Voltage (VDS) rating of 40 V and a continuous Drain Current (ID) of 31 A at 25°C ambient temperature, with a maximum pulsed current capability of 48 A. The device exhibits a typical on-resistance (RDS(on)) of 2.4 mΩ. This component is designed for high-efficiency power conversion applications requiring low conduction losses and fast switching speeds.

Feature Summary

Utilizes Gallium Nitride (GaN) technology for enhanced electron mobility and reduced switching losses compared to traditional silicon devices.
Features a passivated die construction suitable for direct integration into custom substrates or advanced packaging solutions.
Provides low on-resistance characteristics to minimize conduction energy dissipation during operation.

Applications

High-frequency DC-DC converters
Point-of-load regulation modules
Class-D audio amplifiers

Procurement Notes

Verify the specific suffix 'ENGRT' corresponds to the required tape-and-reel or die configuration from official EPC documentation. Confirm that the passive die format aligns with your assembly capabilities, as this component lacks a standard plastic package. Ensure thermal management strategies account for the bare die nature of the product.

Selection Notes

Select this component when system design requires a 40V GaN solution with high current density. Compare RDS(on) values against alternative dies to ensure optimal efficiency targets are met. Consider the thermal resistance characteristics of the intended mounting substrate, as heat dissipation relies entirely on the external package or board layout rather than internal lead frames.

Part Context

EPC2030ENGRT belongs to the EPC20xx series of eGaN FETs, which are engineered for high-power-density applications. These devices leverage EPC's proprietary process technology to deliver superior performance metrics relative to voltage ratings. The series is widely recognized for enabling compact designs in modern power electronics by reducing component count and footprint.

Replacement Considerations

Direct pin-compatible replacements are not applicable due to the bare die format. Evaluate other EPC eGaN dies within the same voltage class, such as those in the EPC20xx family, ensuring their current ratings and RDS(on) specifications meet or exceed the requirements of the original design.