EPC2032

$7.29

Description：GANFET N-CH 100V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:397b16f71c52 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1530 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2032

Overview

The EPC2032 is an enhancement-mode GaN FET die with a 100V drain-source voltage rating. It features a maximum on-resistance of 4mΩ at 5V gate drive and supports a continuous drain current of 48A (Ta). The device exhibits low gate charge of 15nC and input capacitance of 1530pF. Operating junction temperature ranges from -40°C to 150°C, with gate voltage limits of +6V and -4V.

Feature Summary

Enhancement-mode gallium nitride technology for high efficiency
Low switching losses due to zero reverse recovery charge
High power density capability through compact die form factor

Applications

Half-bridge power conversion stages
High-frequency DC-DC converters
Motor drive inverters

Procurement Notes

Verify the specific ordering suffix to confirm packaging format, such as tape-and-reel or cut-tape options. Ensure compatibility with surface-mount assembly processes suitable for bare die components. Confirm RoHS compliance status if required by end-product regulations. Check for any recent production change notices affecting material composition or assembly guidelines.

Selection Notes

Select this component when designing circuits requiring 100V blocking capability with minimal conduction loss. The 48A continuous current rating suits moderate power applications. Consider thermal management strategies appropriate for bare die mounting. Evaluate gate drive requirements against the specified +/- 6V limits to ensure reliable switching performance.

Part Context

Part of the eGaN FET family, the EPC2032 shares characteristics with related models like EPC2030 and EPC2031. These devices utilize similar enhancement-mode GaN technology optimized for power density. The EPC20xx series provides standardized electrical parameters for designers integrating wide-bandgap semiconductors into modern power electronics architectures.