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Product Detailed Parameters
- Description：GANFET N-CH 150V 48A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 5 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1140 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2033 is an enhancement mode Gallium Nitride (GaN) power transistor manufactured by Efficient Power Conversion. It features a 150V drain-source breakdown voltage and utilizes eGaN FET technology to achieve low on-resistance and high electron mobility. The device is designed for applications requiring high switching frequencies and low conduction losses, leveraging the lateral structure of GaN for superior performance compared to traditional silicon MOSFETs.
Feature Summary
- Enhancement mode operation with zero reverse recovery charge
- Lateral device structure enabling low gate charge
- High electron mobility for efficient switching
- Low temperature coefficient for stable thermal performance
Applications
- High frequency DC-DC converters
- AC-DC chargers and adapters
- Fast-chargers for mobile devices
- Class-D audio amplifiers
- Solar optimizers and MPPT systems
Procurement Notes
Verify the specific package type and tape-and-reel specifications against the official datasheet before ordering. Confirm that the intended application voltage does not exceed the continuous drain-source rating. Ensure gate drive requirements align with the enhancement mode characteristics. Check for any recent product change notices regarding substrate or vendor changes.
Selection Notes
Select this component for designs prioritizing high efficiency at elevated switching frequencies. Consider the thermal management requirements associated with the exposed pad package. Evaluate the system's need for zero reverse recovery charge to minimize switching losses in hard-switched topologies. Compare total gate charge metrics against alternative silicon solutions for optimal driver selection.
Part Context
The EPC2033 belongs to the eGaN FET family from Efficient Power Conversion, which integrates GaN growth on silicon wafers using standard CMOS equipment. This family is characterized by enhanced thermal-max packages and wettable flanks for improved reliability. It serves as a direct replacement candidate for silicon MOSFETs in space-constrained, high-power-density applications.
Replacement Considerations
Direct pin-compatible replacements within the same voltage class include the EPC2034, which offers higher current capability but operates at 200V. Designers must verify gate drive compatibility when substituting between different eGaN FET models due to potential variations in threshold voltage and gate charge.
