EPC2034C

$8.80

Description：GANFET N-CH 200V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d3ba3bf90ea Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 200V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id：2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1140 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2034C

Overview

The EPC2034C is an enhancement-mode Gallium Nitride (GaN) power transistor with a 200 V drain-source voltage rating. It features a maximum continuous drain current of 48 A and a pulsed drain current of 213 A. The device exhibits a typical on-resistance of 8 mΩ at 5 V gate drive. Key electrical characteristics include a maximum gate charge of 11 nC, input capacitance of 1140 pF, output capacitance of 641 pF, and reverse transfer capacitance of 3.1 pF. It operates within a junction temperature range of -40°C to 150°C.

Feature Summary

Lateral device structure enables zero reverse recovery charge for the built-in diode.
High electron mobility allows for exceptionally low on-state resistance.
Majority carrier operation results in minimal gate charge requirements.

Applications

DC/DC converters
Isolated DC/DC converters
Synchronous rectification for AC/DC and DC/DC applications

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and handling specifications. Ensure compatibility with existing thermal management designs due to the bare die form factor. Confirm RoHS compliance status through manufacturer certificates prior to integration into regulated products.

Selection Notes

Select this component for high-frequency switching applications where low gate charge reduces driver losses. The low on-resistance minimizes conduction losses in high-current scenarios. Evaluate thermal performance carefully as the device lacks an external lead frame, requiring direct attachment to a heat sink or substrate.

Part Context

This part belongs to the eGaN FET family, which utilizes GaN grown on silicon wafers processed with standard CMOS equipment. This manufacturing approach leverages established infrastructure to achieve high performance. The lateral structure distinguishes it from vertical power devices, offering unique switching characteristics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout and thermal pad dimensions when considering alternative suppliers.