EPC2035

$1.67

Description：GANFET N-CH 60V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:01c5df233799 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 60V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id：2.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs：1.15 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：115 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2035

Overview

The EPC2035 is a GaN FET power integrated circuit from EPC, designed for high-efficiency power conversion. It integrates a 100V enhancement-mode GaN transistor with a dedicated gate driver and protection features. The device operates with low on-resistance and fast switching speeds, reducing conduction and switching losses in DC-DC converters and motor drives.

Feature Summary

Integrated gate driver simplifies control logic
Enhancement-mode operation ensures safe default state
Built-in overcurrent and thermal protection mechanisms

Applications

Point-of-load DC-DC converters
Server and data center power supplies
Industrial motor drives

Procurement Notes

Verify the specific suffix code to confirm pinout and package type. Check RoHS compliance status against current manufacturing batches. Confirm lead time availability directly with authorized distributors as supply chains fluctuate.

Selection Notes

Select based on required voltage rating and current handling capacity. Ensure the PCB layout supports the high-frequency switching characteristics. Verify compatibility with the intended controller interface for optimal performance.

Part Context

Part of EPC's eGaN FET portfolio focusing on system-level integration. Designed to replace traditional silicon MOSFETs in high-density applications. Offers improved efficiency and power density compared to discrete solutions.

Replacement Considerations

Direct replacements are limited due to proprietary integration. Evaluate equivalent eGaN devices from EPC or alternative GaN manufacturers with similar voltage and current ratings. Verify pin compatibility before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.