EPC2036

$1.67

Description：GANFET N-CH 100V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bb8a6c1842c4 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id：2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs：0.91 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2036

Overview

The EPC2036 is a 100 V enhancement mode power transistor from the eGaN FET family. It features a chip-scale package designed for low inductance and high-speed switching applications. The device supports a continuous drain current of 1.7 A at Ta and is suitable for wireless power, charging, and laser driver circuits.

Feature Summary

Chip-scale package architecture enabling ultra-low parasitic inductance
Enhancement mode operation with high switching speed capabilities
Designed for optimal performance in resonant and capacitive discharge drivers

Applications

Wireless power transfer systems
Pulse laser driver circuits
Capacitive discharge drivers

Procurement Notes

Verify component authenticity through authorized channels as the part status is discontinued. Confirm RoHS3 compliance and check for Product Change Notices regarding availability or specification updates before integration into new designs.

Selection Notes

Select this component for applications requiring fast turn-on times under 1 nanosecond and high peak current handling. Ensure the design utilizes optimized PCB layouts to minimize loop inductance, leveraging the device's inherent low-inductance package characteristics for maximum efficiency.

Part Context

This device belongs to the eGaN FET series manufactured by Efficient Power Conversion Corporation. It is specifically engineered for high-frequency power conversion and switching applications where rapid transient response and minimal switching losses are critical requirements.