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Product Detailed Parameters
- Description：TRANSISTOR GAN 40V .0105OHM
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：664 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2044 is an enhancement mode Gallium Nitride (GaN) power transistor featuring a single N-Channel configuration. It supports a drain-to-source voltage of 100 V and delivers a continuous drain current of 9.4 A at 25°C ambient temperature. The device exhibits a typical on-resistance of 10.5 mΩ. Packaged as a surface-mount die with dimensions of 518 μm ± 25 μm, it is designed for high-efficiency applications requiring ultra-fast switching and minimal footprint.
Feature Summary
- Enhancement mode GaN technology enabling ultra-high efficiency
- Zero reverse recovery charge eliminating switching losses
- Ultra-small surface mount die footprint for compact designs
Applications
- 48 V DC/DC converters
- Brushless DC motor drivers
- Synchronous rectification in AC/DC and DC/DC systems
- Solar inverters
- LiDAR systems
- eMobility applications
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, such as reel or cut tape, as availability varies by distributor. Confirm compatibility with SAC305 Type 4 solder containing 88.5% metals content during assembly. Ensure thermal management aligns with the 9.4 A continuous drain current rating at 25°C. Cross-reference datasheet parameters against system requirements before finalizing procurement.
Selection Notes
Select this component for designs prioritizing efficiency and size over traditional silicon MOSFETs. The 100 V rating suits low-voltage high-current applications. Consider the die package format, which requires specialized mounting processes compared to standard leaded packages. Evaluate thermal performance under load to ensure the 10.5 mΩ resistance meets system loss budgets.
Part Context
This part belongs to EPC's line of enhancement mode GaN power transistors. These devices leverage wide-bandgap material properties to outperform conventional silicon counterparts in speed and efficiency. The EPC2044 specifically targets power densities where small form factors and rapid switching are critical constraints.
Replacement Considerations
Direct pin-compatible replacements may not exist due to the unique die packaging. Designers must evaluate interface differences when substituting with other GaN FETs or silicon MOSFETs. Verify that alternative components support similar drive voltages and thermal characteristics to maintain circuit stability.
