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Product Detailed Parameters
- Description：GANFET N-CH 40V 16A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：5mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：7.6 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：805 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2049ENGRT is an eGaN FET die featuring an N-channel configuration with a 40V drain-source voltage rating. It supports a continuous drain current of 16A at ambient temperature and achieves a maximum on-resistance of 5 milliohms at 15A and 5V gate drive. The device exhibits a maximum gate charge of 7.6nC at 5V and an input capacitance of 805pF at 20V. Operating within a junction temperature range of -40°C to 150°C, it utilizes a surface-mount die package.
Feature Summary
- Utilizes eGaN technology for enhanced switching performance
- Features low on-resistance for efficient power conduction
- Designed for high-frequency operation with reduced switching losses
Applications
- Half-bridge power conversion circuits
- High-efficiency DC-DC converters
- Power supply modules requiring compact form factors
Procurement Notes
Verify component status as the part may be discontinued. Confirm availability through authorized distributors or direct manufacturer channels. Ensure compatibility with existing thermal management solutions due to the bare die format. Review datasheet specifications for handling requirements and soldering profiles appropriate for GaN devices.
Selection Notes
Select this component for applications demanding high power density and fast switching speeds. Consider the 40V rating and 16A current capability against system voltage and load requirements. Evaluate gate drive compatibility with the specified 5V threshold and charge characteristics. Assess thermal design needs for the exposed die package to maintain safe operating temperatures.
Part Context
This component belongs to the EPC20 series of enhancement-mode Gallium Nitride field-effect transistors. These devices are engineered to replace traditional silicon MOSFETs in power electronics, offering superior efficiency and size reduction. The ENGRT suffix indicates a specific tape-and-reel packaging format for automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other eGaN dies from the same manufacturer regarding pinout, electrical parameters, and thermal characteristics before substitution.
