EPC2050

$5.72

Description：TRANS GAN BUMPED DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e897145f6b90 Category: Single FETs, MOSFETs Brand: EPC

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS GAN BUMPED DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：628 pF @ 280 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Download product information

EPC2050

Overview

The EPC2050 is a 350 V enhancement-mode gallium nitride (GaN) power transistor. It features a maximum on-resistance of 80 mΩ and supports a pulsed output current of 26 A. The device operates with a gate-source voltage range of +6 V to -4 V, has a maximum gate charge of 4 nC at 5 V, and exhibits a threshold voltage of 2.5 V max at 1 mA. Packaged in a BGA format measuring 1.95 x 1.95 mm, it is designed for high-efficiency power conversion applications.

Feature Summary

Enhancement-mode GaN technology enabling direct drive from standard logic levels
High efficiency performance suitable for compact power designs
Small form factor package reducing footprint compared to silicon equivalents

Applications

DC-DC converters
Isolated DC-DC converters
Solar power inverters
Electric vehicle charging systems
Motor drives

Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant and tape-and-reel specifications required for your assembly process. Confirm that the component meets RoHS compliance standards if mandated by your regional regulations. Ensure compatibility with your existing PCB footprint design, as the BGA package requires precise soldering profiles. Check for any recent updates to the datasheet regarding thermal characteristics or recommended driver circuits.

Selection Notes

Select this component when a low-voltage, high-current GaN solution is needed for bus voltages between 170 V and 250 V. It is particularly suitable for applications requiring small size and high efficiency, such as wall-adapters or aerospace equipment. Consider the 80 mΩ Rds(on) for conduction loss calculations and the 26 A pulsed current capability for peak load handling. Ensure your gate driver can provide the specified +6 V / -4 V swing for optimal switching performance.

Part Context

The EPC2050 belongs to EPC's eGaN FET series, representing a generation of vertically integrated GaN power transistors. These devices are engineered to replace traditional silicon MOSFETs in medium-voltage applications, offering significantly reduced size and improved switching speeds. The product line focuses on simplifying power supply design through monolithic integration of the gate driver and protection features within the package.