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Product Detailed Parameters
- Description：GANFET N-CH 100V 8.2A DIE
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：575 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2052 is a GaN FET N-channel die with a drain-source voltage of 100 V and a continuous drain current of 8.2 A at Ta. It features a maximum gate-source voltage of +6 V/-4 V and a threshold voltage of 2.5 V @ 3 mA. The device has a maximum gate charge of 4.5 nC @ 5 V and an input capacitance of 575 pF @ 50 V. Its on-resistance is 13.5 mOhm @ 11 A, 5 V. Operating temperature ranges from -40°C to 150°C TJ.
Feature Summary
- Enhanced switching frequency capability resulting in lower switching losses and reduced drive power requirements.
- Higher efficiency achieved through minimized conduction and switching losses alongside zero reverse recovery charge.
- Compact die form factor designed to support higher power density in power conversion applications.
Applications
- High-frequency power conversion systems
- Power supplies requiring high power density
- Applications benefiting from fast switching speeds
Procurement Notes
Verify the specific package type, as this component is supplied as a die rather than a standard packaged device. Confirm compatibility with your substrate and assembly processes. Check for any recent product change notices regarding substrate suppliers or manufacturing locations. Ensure handling procedures account for the bare die nature of the component to prevent damage during installation.
Selection Notes
Select this component when a 100 V rating and approximately 8.2 A continuous current are required in a minimal footprint. Consider its low gate charge and on-resistance for high-efficiency designs. Evaluate thermal management strategies suitable for direct die attachment. Compare against other devices in the 100 V Gen 5 family for specific performance trade-offs.
Part Context
The EPC2052 belongs to the EPC 100 V Gen 5 family of enhancement-mode gallium nitride power transistors. These devices utilize advanced GaN technology to outperform traditional silicon MOSFETs in terms of speed and efficiency. The part is manufactured by Efficient Power Conversion (EPC) and is intended for integration into custom power modules or direct board-level implementations.
Replacement Considerations
Consult official substitution guides for compatible parts within the EPC 100 V Gen 5 family. Verify pinout and electrical parameter equivalence before replacing existing silicon MOSFETs or other GaN dies. No direct public substitute part numbers are confirmed for this specific die configuration.
