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Product Detailed Parameters
- Description：GANFET N-CH 100V 48A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2053 is an enhancement mode Gallium Nitride (GaN) power transistor designed for high-efficiency switching applications. It features a drain-source voltage rating of 100 V and a continuous drain current capability of 246 A. The device exhibits a maximum on-resistance of 3.8 mΩ at a gate drive voltage of 5 V. Operating characteristics include a maximum input capacitance of 1895 pF at 50 V and a threshold voltage of 2.5 V. The component supports junction temperatures ranging from -40°C to 150°C, ensuring robust performance in demanding thermal environments.
Feature Summary
- Enhancement mode GaN technology enabling high-speed switching with low conduction losses
- High current density design supporting up to 246 A continuous drain current
- Low on-resistance characteristic minimizing power dissipation during conduction
- Wide operating temperature range suitable for industrial and automotive conditions
Applications
- DC/DC converters
- Isolated DC/DC converters
- Brushless DC motor drivers
- Synchronous rectification for AC/DC and DC/DC applications
- LiDAR and pulsed power systems
Procurement Notes
Verify the specific datasheet revision and package configuration before procurement. Confirm that the supplier provides original manufacturer documentation to ensure authenticity. Check for any specific handling requirements related to electrostatic discharge protection during storage and assembly. Ensure compatibility with existing gate drive circuits regarding voltage levels and timing constraints.
Selection Notes
Select this component when high current capacity and low on-resistance are critical for efficiency. Consider the 100 V rating for intermediate voltage bus applications. Evaluate the thermal management requirements given the high current capabilities. Ensure the system design accommodates the specific gate drive voltage requirements for optimal performance.
Part Context
The EPC2053 belongs to the Efficient Power Conversion Corporation's lineup of enhancement mode GaN transistors. These devices leverage advanced semiconductor materials to outperform traditional silicon MOSFETs in terms of speed and efficiency. The product line targets modern power electronics requiring compact form factors and high power density.
Replacement Considerations
No direct public substitute part numbers are confirmed for this specific model. Cross-referencing requires matching voltage, current, and package specifications carefully.
