EPC2055

Overview

The EPC2055 is a Gallium Nitride Field-Effect Transistor (eGaN FET) manufactured by Efficient Power Conversion. It features an N-channel configuration with a drain-source breakdown voltage of 40 V and a continuous drain current rating of 29 A. The device utilizes a die package format, designed for high-efficiency power conversion applications requiring low on-resistance and fast switching speeds.

Feature Summary

• Utilizes eGaN technology for enhanced switching performance
• N-channel configuration optimized for synchronous rectification
• Die package design facilitates compact PCB integration

Applications

• Synchronous buck converters
• Automotive console power systems
• Compact industrial power supplies
• Telecommunications power modules

Procurement Notes

Verify the specific package variant and lot traceability upon order confirmation. Ensure that the receiving facility has appropriate electrostatic discharge protection protocols in place, as the component is supplied in a bare die format. Confirm compatibility with the intended gate driver circuitry before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a 40 V rating with high current handling capabilities. Consider the thermal management requirements associated with the die package. Evaluate the gate charge characteristics against the driving capability of the chosen controller to ensure optimal switching efficiency and minimize losses.

Part Context

This component belongs to the eGaN FET family from Efficient Power Conversion. It is commonly integrated into reference designs such as the EPC9160 synchronous buck converter, which demonstrates its utility in dual-output power systems operating between 9 V and 24 V inputs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameters against potential alternatives if direct substitution is required.