EPC2057

$1.93

Description：TRANS GAN 50V .0085OHM 4LGA
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4a295b5c66f0 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 50V .0085OHM 4LGA
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：9.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：444 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2057

Overview

The EPC2057 is an enhancement mode eGaN FET power transistor with a 50 V drain-to-source voltage rating and a maximum on-resistance of 8.5 mΩ at 6 A. It features a continuous drain current of 9.6 A and operates within a junction temperature range of -40°C to 150°C. The device utilizes a lateral structure for zero reverse recovery charge and low gate charge, supplied as a passivated die with solder bars in a 1.5 x 1.2 mm footprint.

Feature Summary

Zero reverse recovery charge due to majority carrier diode structure
Ultra-low gate charge enabling high switching frequencies
Top surface electrically connected to source potential
Compatible with standard 5 V gate drive logic

Applications

DC-DC Converters
Isolated DC-DC Converters
USB-C Battery Chargers
LED Lighting
12 V–24 V Input Motor Drives

Procurement Notes

Verify the specific package configuration upon ordering, as the EPC2057 is supplied exclusively in passivated die form equipped with solder bars. Confirm that procurement channels provide the correct tape and reel specifications, which utilize a 4 mm pitch and 8 mm width on a 7-inch reel. Ensure handling procedures account for the bare die nature of the component during assembly.

Selection Notes

Select this component for designs requiring high efficiency and minimal switching losses in the 50 V range. The device is suitable for applications where small footprint and high power density are critical. Consider the thermal resistance characteristics when designing heat dissipation solutions, particularly if utilizing dual-sided cooling methods for optimal performance.

Part Context

This part belongs to the eGaN FET family from Efficient Power Conversion Corporation. These transistors leverage Gallium Nitride technology to achieve superior electron mobility and low temperature coefficients compared to traditional silicon MOSFETs. The EPC2057 specifically targets high-frequency power conversion tasks where low on-state losses and fast switching transitions are required.