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Product Detailed Parameters
- Description：TRANS GAN .0015OHM 40V 14LGA
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：69A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：1.55mOhm @ 37A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs：22.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：3267 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2067 is an enhancement-mode gallium nitride (eGaN) power transistor with a 40V drain-source voltage rating. It features an N-channel configuration and operates within a junction temperature range of -40°C to +150°C. Key electrical parameters include a maximum gate-source voltage of +6V/-4V, an input capacitance of 3267 pF at 20V, and a continuous drain current of 69A at ambient temperature. The device utilizes surface mount die packaging.
Feature Summary
- Enhancement-mode operation utilizing gallium nitride technology
- Zero reverse recovery charge characteristics
- Ultra-low gate charge for reduced drive power
- High-frequency capability enabling faster switching
Applications
- High-efficiency synchronous rectification
- High-frequency DC-DC converters
- Power density optimized power supplies
Procurement Notes
Verify the specific package type and tape-and-reel specifications directly from the manufacturer's datasheet before ordering. Confirm that the supplier provides genuine EPC components with traceable documentation. Ensure handling procedures account for the surface mount die format to prevent electrostatic discharge damage during assembly.
Selection Notes
Select this component for designs requiring high switching frequencies and minimal conduction losses. The eGaN technology offers superior efficiency compared to silicon MOSFETs in similar voltage classes. Consider the thermal management requirements associated with the die package and verify compatibility with standard gate drive voltages.
Part Context
The EPC2067 belongs to the eGaN FET family produced by Efficient Power Conversion. These devices leverage gallium nitride material properties to achieve higher electron mobility than traditional silicon. The product line targets applications demanding compact form factors and enhanced energy efficiency in power conversion systems.
Replacement Considerations
Consult official substitution guides for compatible eGaN devices. Verify pinout and thermal pad configurations when replacing with alternative manufacturers' parts to ensure mechanical and electrical compatibility.
