EPC2069

$3.66

Description：GAN FET 40V .002OHM 8BUMP DIE
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:69f6760ddb50 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GAN FET 40V .002OHM 8BUMP DIE
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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EPC2069

Overview

The EPC2069 is a 40 V enhancement-mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It features an ultra-low on-resistance of 2.25 mΩ and a typical gate charge of 12.5 nC at 20 V drain-source voltage and 5 V gate-source voltage. The device is housed in an 8-bump die package with dimensions of 3.25 x 3.25 mm, resulting in a footprint area of 10.6 mm². These electrical characteristics enable high-efficiency power conversion solutions.

Feature Summary

Zero reverse recovery charge for reduced switching losses
Ultra-low on-resistance enabling high current density
Low gate charge facilitating faster switching speeds

Applications

48 V to 12 V DC/DC converter modules
High-efficiency point-of-load regulation
Server power supply units

Procurement Notes

Verify the specific datasheet version and ordering suffix when sourcing. Confirm that the component is supplied as a bare die rather than a packaged module. Ensure compatibility with flip-chip or wire-bond assembly processes suitable for 8-bump die configurations. Cross-reference part numbers with official manufacturer documentation to avoid counterfeit components.

Selection Notes

Select this component for applications requiring high power density and efficiency above 98%. The low gate charge reduces driver requirements compared to silicon MOSFETs. Consider thermal management strategies appropriate for bare die mounting. Evaluate system-level benefits from zero reverse recovery charge in synchronous rectification topologies.

Part Context

This device belongs to the EPC20 series of eGaN FETs designed for low-voltage, high-current applications. It represents a generation of wide-bandgap semiconductors aimed at replacing traditional silicon devices in power electronics to achieve smaller form factors and higher performance metrics.