EPC2103

FET, MOSFET Arrays Overview

The EPC2103 is an enhancement-mode Gallium Nitride (eGaN) power transistor configured as a half-bridge. It features two integrated FETs with a drain-to-source voltage rating of 80 V and a continuous drain current of 30 A at 25°C. The device exhibits a typical on-resistance of 5.5 mΩ. Dynamic characteristics include a total gate charge of 6.5 to 8 nC and zero reverse recovery charge. Thermal performance is defined by a junction-to-case resistance of 0.3 °C/W. The component is supplied in passivated die form with solder bumps, packaged in an 8 mm pitch tape and reel configuration.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge topology containing two complementary eGaN FETs within a single package.
• Lateral device structure providing exceptionally low gate charge and zero reverse recovery charge.
• Negative temperature coefficient for on-resistance, allowing stable operation under varying thermal conditions.
• Passivated die construction utilizing solder bumps for direct surface mount assembly.

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• Motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and lot date code upon purchase, as these identify the manufacturing batch. Confirm that the receiving facility has appropriate electrostatic discharge protection and moisture sensitivity handling procedures, as the component is supplied in a tape and reel format requiring specialized pick-and-place equipment for die-level components.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high switching frequencies and compact footprints. Ensure the gate driver can support the specified 5 V logic levels and negative off-state voltage requirements. Verify that the PCB layout accommodates the recommended land pattern dimensions and stencil thickness to ensure reliable solder joint formation for the solder bump interconnects.

FET, MOSFET Arrays Part Context

The EPC2103 belongs to the eGaN FET family from Efficient Power Conversion Corporation. It represents a shift from traditional silicon MOSFETs by utilizing gallium nitride material properties for superior electron mobility. This technology enables higher efficiency and power density in power electronics applications compared to conventional lateral or vertical semiconductor devices.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the datasheet. Replacement requires careful evaluation of the new component's pinout compatibility, thermal resistance characteristics, and gate drive requirements against the original design specifications.