EPC2106ENGRT

Description：MOSFET 2N-CH 100V 1.7A DIE
Series：eGaN®

SKU:6f32282dc062 Category: FET, MOSFET Arrays Brand: EPC

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Product introduction

EPC2106ENGRT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists EPC. Its product description is MOSFET 2N-CH 100V 1.7A DIE. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EPC2106ENGRT

Description：MOSFET 2N-CH 100V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：GaNFET (Gallium Nitride)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：1.7A
Rds On (Max) @ Id, Vgs：70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id：2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs：0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：75pF @ 50V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for EPC2106ENGRT

EPC2106ENGRT

FET, MOSFET Arrays Overview

The EPC2106 is an enhancement-mode Gallium Nitride (GaN) power transistor half-bridge. It features a 100 V drain-to-source voltage rating and a maximum on-resistance of 70 mΩ at 5 V gate drive. The device supports a continuous drain current of 1.7 A at 25°C and can handle pulsed currents up to 18 A. Total gate charge is typically 900 pC, with zero reverse recovery charge. Operating temperatures range from -40°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

Integrated half-bridge configuration with two matched GaN FETs
Lateral device structure providing zero reverse recovery charge
Passivated die form factor with solder bumps for surface mount assembly

FET, MOSFET Arrays Applications

High frequency DC-DC conversion
Class-D audio amplifiers

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision date against the manufacturer's official records before finalizing component selection. Confirm that the specific ordering suffix matches the required tape and reel dimensions for automated pick-and-place equipment. Ensure thermal management designs account for the specified junction-to-board resistance values.

FET, MOSFET Arrays Selection Notes

Evaluate the 70 mΩ on-resistance against the target load current to determine conduction losses. Consider the 900 pC total gate charge when sizing the gate driver circuitry for switching speed requirements. Verify that the PCB land pattern strictly adheres to the recommended stencil drawing dimensions to ensure proper solder joint formation.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN FET family produced by Efficient Power Conversion Corporation. It utilizes lateral GaN technology to achieve high electron mobility and low temperature coefficients. The device is designed as a bare die intended for integration into custom printed circuit boards or hybrid modules.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When selecting alternatives, match the 100 V breakdown voltage, half-bridge topology, and compatible package footprint. Verify that any replacement maintains similar gate charge characteristics to preserve existing driver performance.