EPC2107

FET, MOSFET Arrays Overview

The EPC2107 is an enhancement-mode Gallium Nitride (GaN) power transistor half-bridge integrated with a synchronous bootstrap circuit. It contains three N-channel GaNFETs: two high-current devices (Q1 and Q2) rated for 100V drain-to-source voltage, 390mΩ maximum on-resistance at 5V gate drive, and 1.7A continuous current; and one low-current device (Q3) rated for 100V, 3300mΩ resistance, and 0.5A continuous current. The component operates within a junction temperature range of -40°C to 150°C and utilizes a passivated die form with solder bumps.

FET, MOSFET Arrays Feature Summary

• Integrates a half-bridge configuration with a synchronous bootstrap circuit for simplified gate driving.
• Utilizes lateral GaN structure to achieve exceptionally low gate charge and zero reverse recovery charge.
• Features a negative temperature coefficient for on-state resistance to support parallel operation.

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• Class-D audio amplifiers
• Wireless power transfer systems

FET, MOSFET Arrays Procurement Notes

Verify the specific lot date code and marking line details against the datasheet specifications upon receipt. Confirm that the received components match the required moisture sensitivity level classification. Ensure proper handling procedures are followed during assembly to maintain device integrity.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a compact half-bridge solution with integrated bootstrap functionality. Consider the thermal resistance characteristics and recommended land pattern dimensions for optimal heat dissipation. Evaluate the gate charge requirements against the available driver capabilities.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN FET family manufactured by Efficient Power Conversion Corporation. It represents a shift towards integrating discrete power stages into single packages to reduce board space and improve switching performance in modern power electronics designs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. Designers replacing silicon MOSFETs should utilize the EPC GaN Power Bench cross-reference tool to identify suitable alternatives based on specific operating conditions.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the main transistors?

The maximum continuous drain current for Q1 and Q2 is 1.7 A at an ambient temperature of 25°C with a thermal resistance of 60°C/W.

Does the EPC2107 exhibit reverse recovery charge?

No, the lateral device structure and majority carrier diode provide zero reverse recovery charge (QRR).

How is the component packaged?

The EPC2107 is supplied only in passivated die form with solder bumps, intended for surface mount assembly using the recommended land pattern.