EPC2203

$1.25

Description：GANFET N-CH 80V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9550fc9d5cd8 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 80V 1.7A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id：2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs：0.83 nC @ 5 V
Vgs (Max)：+5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds：88 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2203

Overview

The EPC2203 is an 80 V enhancement-mode GaN FET in a 0.9 mm x 0.9 mm BGA-4 package. It features an on-resistance of 73 mΩ and supports pulse currents up to 18 A or 23 A depending on the source. The device utilizes eGaN technology for high efficiency.

Feature Summary

Zero reverse recovery charge eliminates switching losses associated with body diodes.
Chip-scale footprint enables significantly higher power density compared to equivalent MOSFETs.
High switching frequency capability reduces overall system size and weight.

Applications

Automotive DC-DC converters
On-board chargers (OBC)
Point-of-load regulation

Procurement Notes

Verify the specific datasheet revision to confirm exact electrical limits, as sources cite varying pulse current ratings. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status with the manufacturer before finalizing procurement orders.

Selection Notes

Select this component for designs requiring minimal footprint and high efficiency at 80 V. Evaluate thermal management requirements due to the small package size. Compare total system cost against discrete MOSFET solutions considering reduced passive component counts.

Part Context

Part of the Efficient Power Conversion eGaN family designed for automotive reliability. It replaces silicon MOSFETs in high-frequency applications. The device integrates the GaN HEMT die into a compact surface-mount package suitable for automated assembly.

Replacement Considerations

Direct pin-compatible replacements are not explicitly listed in public documentation. Designers must evaluate alternative 80 V GaN devices from other manufacturers, ensuring voltage ratings and thermal characteristics match the original design constraints.