ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS GAN 80V .006OHM AECQ101
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：29A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 16A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：851 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Download product information
Overview
The EPC2204A is an enhanced gallium nitride (eGaN) power transistor featuring a 100 V drain-source breakdown voltage. It integrates low on-resistance and low output capacitance to optimize performance in hard-switching applications. The device utilizes a compact package design that minimizes printed circuit board footprint and current loop area, thereby reducing electromagnetic interference.
Feature Summary
- Enhanced gallium nitride technology for high-efficiency power conversion
- Optimized trade-off between low on-resistance and low output capacitance
- Compact packaging for reduced PCB size and minimized electromagnetic interference
Applications
- Hard switching power supply applications
- Green solar balcony power generation systems
- MPPT charging converters
Procurement Notes
Verify the specific suffix of the part number against official manufacturer documentation to confirm exact pinout configuration and thermal characteristics. Ensure compatibility with existing gate drive requirements for eGaN devices. Confirm that the selected variant meets the specific voltage and current ratings required for the target application design.
Selection Notes
Select this component for designs requiring high efficiency and compact form factors in low-voltage power stages. The device is suitable for applications where minimizing electromagnetic interference through small current loops is critical. Evaluate thermal management needs based on the specific switching frequency and load conditions of the final system.
Part Context
This component belongs to the eGaN FET family from Efficient Power Conversion. It is designed to replace traditional silicon MOSFETs in applications demanding higher power density and efficiency. The technology leverages the superior material properties of gallium nitride to achieve faster switching speeds and lower conduction losses compared to conventional semiconductor solutions.
Replacement Considerations
Direct replacement requires careful evaluation of gate drive voltage levels and layout constraints due to the fast switching characteristics of gallium nitride. Verify that the host system's control logic supports the specific input thresholds of the eGaN transistor.
