EPC2212

$3.35

Description：GANFET N-CH 100V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e376adea7ba Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：407 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2212

Overview

The EPC2212 is a die-level, surface-mount N-channel GaNFET from the eGaN series. It features a 100 V drain-source voltage and an on-resistance of 13.5 mΩ at 5 V gate drive. The device supports a continuous drain current of 18 A and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a maximum gate charge of 4 nC at 5 V, a threshold voltage of 2.5 V at 3 mA, and an input capacitance of 407 pF at 50 V.

Feature Summary

Automotive-grade reliability certified under AEC-Q101 standards
High-speed switching capability enabled by low gate charge and capacitance
Robust thermal performance supporting high-temperature operation up to 150°C

Applications

Automotive power electronics systems
High-frequency DC/DC conversion circuits
Wireless power transfer applications
Synchronous rectification modules

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific order matches the EPC2212 designation and includes valid traceability documentation. Ensure compliance with automotive quality requirements if intended for regulated vehicle applications.

Selection Notes

Select this component for designs requiring compact form factors and high efficiency in power conversion. Evaluate thermal management strategies suitable for bare die mounting. Verify compatibility with standard gate drive voltages and ensure PCB layout accommodates the specific package dimensions.

Part Context

This part belongs to the eGaN family of gallium nitride field-effect transistors manufactured by EPC. These devices utilize advanced semiconductor technology to deliver superior performance compared to traditional silicon MOSFETs in terms of switching speed and conduction losses.