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Product Detailed Parameters
- Description：GANFET N-CH 80V 10A DIE
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：238 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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FAQ
Is the EPC2214 an enhancement-mode device?
Yes, the EPC2214 is an enhancement-mode Gallium Nitride (GaN) power transistor.
What is the typical drain-source breakdown voltage for this component?
The EPC2214 features a typical drain-source breakdown voltage of 100V.
