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Product Detailed Parameters
- Description：GANFET N-CH 100V DIE
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1570 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2218 is an enhancement-mode Gallium Nitride (GaN) field-effect transistor (FET) provided as a passivated die with solder bars. It features an N-channel configuration housed in a compact LGA-8 package measuring 3.5 mm by 1.95 mm. The device supports a drain-source breakdown voltage of 100 V and delivers a continuous drain current of 60 A, with pulsed capability up to 231 A. Its low on-resistance is specified at 3.2 milliohms at a gate-source voltage of 5 V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Zero reverse recovery charge enables high-frequency switching with reduced losses
- High power density achieved through small footprint and efficient thermal management
- Enhanced mode operation simplifies drive requirements for power circuits
Applications
- Synchronous rectification in DC/DC converters
- LiDAR and pulse power systems for autonomous vehicles
- Class D audio amplifiers
- BLDC motor drivers
- Point-of-load (POL) converters
Procurement Notes
Verify the specific revision suffix when ordering, as it may indicate variations in solder bar composition or packaging format. Confirm that the procurement channel supplies the bare die variant rather than packaged modules. Ensure compatibility with the intended PCB layout for the LGA-8 footprint. Check for updated datasheets regarding thermal resistance values under specific mounting conditions.
Selection Notes
Select this component for designs requiring high efficiency at elevated switching frequencies. The 100 V rating suits 48 V input systems. Evaluate thermal performance carefully due to the exposed die nature. Ensure gate drive voltages remain within the specified limits to prevent oxide degradation. Consider the low gate charge for driver selection to minimize switching energy loss.
Part Context
This device belongs to the eGaN FET family from Efficient Power Conversion. It represents a shift from traditional silicon MOSFETs by utilizing wide bandgap material properties. The product line targets applications demanding superior power density and switching speed compared to conventional semiconductor solutions.
Replacement Considerations
Direct pin-compatible replacements are not explicitly documented in public sources. Designers must evaluate alternative GaN dies based on matching voltage ratings, on-resistance, and package dimensions. Verify thermal characteristics and gate threshold levels before substituting.
