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Product Detailed Parameters
- Description：TRANSGAN 80V.011OHM AECQ101 9BGA
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：11mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：576 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2252 is an automotive-qualified, enhancement-mode Gallium Nitride (eGaN) field-effect transistor rated at 80 V drain-source voltage. It features a maximum on-resistance of 11 mΩ and supports a continuous drain current of 8.2 A. The device is housed in a compact 1.5 mm x 1.5 mm package capable of delivering 75 A pulse currents. Certified to the AEC-Q101 standard, it offers high switching frequency capabilities with sub-nanosecond transitions.
Feature Summary
- AEC-Q101 automotive qualification for reliable operation in demanding environments
- Ultra-fast switching speed enabling sub-nanosecond transitions and large current pulses within 3 ns
- High power density achieved through a minimal 1.5 mm x 1.5 mm footprint
- Enhanced efficiency via low conduction losses and zero reverse recovery charge
Applications
- Automotive LiDAR systems for autonomous driving and collision avoidance
- 48 V to 12 V DC/DC converters in mild hybrid vehicles
- Low-inductance motor drivers for electric mobility applications
- On-board information entertainment systems
Procurement Notes
Verify that the specific order includes the AEC-Q101 automotive qualification marking, as this certification is critical for the intended vehicle-grade applications. Confirm the package type matches the required 1.5 mm x 1.5 mm form factor for your PCB layout. Ensure gate drive circuits are compatible with the fast switching characteristics to prevent ringing or overshoot issues during operation.
Selection Notes
Select the EPC2252 when space constraints require a small footprint combined with high peak current handling capabilities. It is suitable for designs replacing silicon MOSFETs where higher efficiency and faster switching speeds are necessary. Consider its thermal performance and gate drive requirements when designing for high-frequency operations in automotive environments.
Part Context
The EPC2252 belongs to EPC's portfolio of eGaN FETs designed for high-efficiency power conversion. As an enhancement-mode device, it simplifies drive circuitry compared to depletion-mode alternatives. Its automotive qualification expands the use of wide-bandgap semiconductors in safety-critical vehicle systems, supporting trends toward electrification and advanced driver assistance.
Replacement Considerations
EPC9179 is an evaluation board designed specifically for testing the EPC2252. Designers looking to replace silicon MOSFETs can utilize EPC's cross-reference tools to identify equivalent solutions based on specific operating conditions.
