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Product Detailed Parameters
- Description：TRANS GAN 100V DIE .0018OHM
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：101A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 50A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：7-QFN (3x5)
- Package / Case：7-PowerWQFN
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Overview
The EPC2302ENGRT is a gallium nitride (GaN) power transistor manufactured by Efficient Power Conversion. It features an enhancement-mode normally-off architecture with a 100V drain-source breakdown voltage and a typical on-resistance of 15 milliohms. The device utilizes a low-inductance ePak package to optimize switching performance and thermal dissipation. Key electrical characteristics include a gate threshold voltage range of 1.5 to 2.5 volts and a continuous drain current rating of 68 amperes at case temperature. These specifications support high-efficiency power conversion in modern electronic systems.
Feature Summary
- Enhancement-mode normally-off operation for inherent safety
- Low on-resistance for reduced conduction losses
- Optimized package for high-frequency switching
Applications
- Synchronous buck converters
- Point-of-load regulation
- Class-D audio amplifiers
Procurement Notes
Verify the specific suffix 'ENGRT' against official manufacturer documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with standard surface-mount assembly processes. Cross-reference datasheet revisions to confirm pinout consistency before integration into final designs.
Selection Notes
Select this component for applications requiring high efficiency and compact form factors. Evaluate thermal management requirements based on the specified on-resistance and package thermal resistance. Confirm that the gate drive voltage aligns with the device's threshold specifications for optimal performance.
Part Context
This part belongs to the EPC GaN technology family, designed to replace traditional silicon MOSFETs in high-frequency applications. The ePak package provides a robust solution for power density improvements. It is intended for use in next-generation power supplies and motor drives where size and weight are critical constraints.
Replacement Considerations
Direct replacements must match the 100V rating, 15mOhm resistance, and ePak footprint. Verify gate charge and input capacitance values to ensure control loop stability when substituting with other GaN transistors from different manufacturers.
