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Product Detailed Parameters
- Description：TRANS GAN 100V .0038OHM 3X5PQFN
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：16.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：2366 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：7-QFN (3x5)
- Package / Case：7-PowerWQFN
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Overview
The EPC2306 is a single N-channel enhancement-mode Gallium Nitride (GaN) power transistor designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 63 A at the case temperature. The device exhibits a typical on-resistance (RDS(on)) of 3.8 mΩ, enabling low conduction losses. It supports a pulsed drain current of 197 A and is housed in a compact 7-QFN surface-mount package measuring 3 mm by 5 mm.
Feature Summary
- Enhancement-mode GaN technology providing normally-off operation for simplified gate drive requirements
- Low on-resistance of 3.8 mΩ to minimize conduction losses in power conversion circuits
- High pulse current capability of 197 A for robust performance under transient loads
- Compact 7-QFN (3x5 mm) surface-mount package optimized for high-power-density designs
Applications
- AC-DC chargers and adapters
- Switching mode power supplies (SMPS)
- High-frequency DC-DC converters with up to 80 V input (Buck, Boost, Buck-Boost, LLC)
- Motor drivers
- Synchronous rectification in high-power density DC-DC modules
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and datasheet revisions prior to procurement. Ensure storage conditions comply with moisture sensitivity levels specified in the official documentation. Validate packaging integrity upon receipt to prevent damage to the delicate QFN leads.
Selection Notes
Select the EPC2306 for applications requiring 100 V blocking voltage and high efficiency at elevated frequencies. Evaluate thermal management strategies due to the small footprint and high current density. Ensure gate drive voltages align with the enhancement-mode characteristics. Compare total system cost against silicon alternatives considering potential size and weight reductions.
Part Context
The EPC2306 belongs to EPC's family of packaged GaN FETs, targeting modern power electronics that demand higher frequency operation and reduced form factors. As an enhancement-mode device, it offers inherent safety compared to depletion-mode counterparts. Its integration into systems like SMPS and motor drives leverages GaN's superior electron mobility for improved dynamic performance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Designers should consult EPC directly for cross-reference recommendations or evaluate equivalent 100 V GaN transistors from other manufacturers based on pinout and electrical specifications.
