EPC2307ENGRT

$6.34

Description：TRANS GAN 200V .010OHM 7QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2aca1d3847c1 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 200V .010OHM 7QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1401 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：7-QFN (3x5)
Package / Case：7-PowerWQFN

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EPC2307ENGRT

Overview

The EPC2307ENGRT is an enhancement mode Gallium Nitride High Electron Mobility Transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a 200 V drain-source voltage rating and a typical on-resistance of 10 milliohms at 5 V gate drive. The device is housed in a compact 3 mm x 5 mm 7-lead QFN package designed for surface-mount applications. Key electrical characteristics include a continuous drain current of 48 A at ambient temperature and 63 A at case temperature, with a maximum pulsed drain current of 190 A.

Feature Summary

Utilizes eGaN technology to achieve low on-resistance and high switching efficiency
Supports dual-sided cooling for enhanced thermal management and power density
Designed for high-frequency operation suitable for advanced power conversion topologies

Applications

High-resolution LiDAR and dToF systems
Wireless power transfer systems requiring extended range
Class D audio amplifiers for professional and consumer audio equipment

Procurement Notes

Verify the specific suffix ENGRT indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation or certified distributor declarations. Ensure the component matches the exact 200V rating and 7-QFN package dimensions specified in the datasheet to guarantee compatibility with existing PCB footprints and thermal designs.

Selection Notes

Select this component for designs requiring high power density and fast switching speeds within a 200V voltage class. Consider the 3x5mm QFN footprint for space-constrained layouts. Evaluate thermal requirements carefully, as the device supports dual-sided cooling to maximize heat dissipation capabilities in high-current applications.

Part Context

This part belongs to the EPC eGaN FET family, which leverages Gallium Nitride semiconductor technology to outperform traditional silicon MOSFETs in efficiency and speed. The EPC2307 specifically targets mid-voltage applications where size and thermal performance are critical constraints.