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Product Detailed Parameters
- Description：TRANS GAN 150V .006OHM 3X5PQFN
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：13.8 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：2103 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：7-QFN (3x5)
- Package / Case：7-PowerWQFN
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Overview
The EPC2308ENGRT is an enhancement-mode Gallium Nitride (eGaN®) power FET manufactured by Efficient Power Conversion. It features a 150 V drain-source voltage rating and a maximum on-resistance of 6 mΩ at 5 V gate drive. The device supports a continuous drain current of 48 A at case temperature, with a threshold voltage maximum of 2.5 V. Key electrical characteristics include a maximum gate charge of 13.8 nC and an input capacitance of 2103 pF. It operates within a junction temperature range of -40°C to 150°C and utilizes a 7-PowerWQFN package.
Feature Summary
- Enhancement-mode GaN technology providing low conduction and switching losses
- Thermally enhanced QFN package with exposed top for efficient heat dissipation
- Wettable flanks for improved solder joint inspection and assembly reliability
Applications
- DC/DC converters for industrial applications
- Synchronous rectifiers in AC/DC SMPS and chargers
- Motor drivers for electric tools and robotics
Procurement Notes
Verify the specific suffix 'ENGRT' corresponds to the tape-and-reel packaging format required for automated surface-mount assembly. Confirm that the 16-week standard lead time aligns with production schedules. Ensure compatibility with RoHS3 compliance standards and check for any specific moisture sensitivity level handling requirements during storage and reflow processes.
Selection Notes
Select this component when a 150 V rating is necessary for higher bus voltages compared to 100 V alternatives. The 6 mΩ on-resistance offers a balance between conduction loss and cost for medium-power designs. Consider the 3x5 mm footprint for space-constrained layouts requiring high power density without sacrificing thermal performance through the exposed pad design.
Part Context
This device belongs to the eGaN® FET family from Efficient Power Conversion, designed to replace traditional silicon MOSFETs. It shares pinout compatibility with previous generations like the EPC2302 and EPC2306, facilitating direct upgrades in existing designs. The engineering sample or production run designation indicates availability for volume manufacturing in high-efficiency power conversion systems.
Replacement Considerations
Direct pin-compatible substitutes include the EPC2302 and EPC2306, though these are rated for 100 V rather than 150 V. Designers must verify that the lower voltage ratings of these alternatives meet the specific circuit requirements before substitution.
