EPC2619ENGRT

$3.26

Description：TRANS GAN 80V .0033OHM 6LGA
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6c2633532ae9 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 80V .0033OHM 6LGA
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id：2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1180 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2619ENGRT

Overview

The EPC2619ENGRT is an enhancement mode GaN HEMT in a 6LGA package (2.5x1.5mm). It features a 100V drain-source voltage and a typical on-resistance of 3.3mΩ at 5V gate drive, with a maximum of 4.2mΩ. The device supports a continuous drain current of 29A at Ta. Key electrical characteristics include a threshold voltage range of 1.5V to 2.5V and a forward transconductance of 20S. It operates with zero reverse recovery charge, enabling high-frequency switching with minimal losses.

Feature Summary

Enhancement-mode normally-off operation for simplified driver design
Zero reverse recovery charge eliminates body diode switching losses
Ultra-low on-resistance reduces conduction losses
Passivated die form with solder bars for direct board mounting

Applications

DC-DC converters
Isolated DC-DC converters
Synchronous rectification applications

Procurement Notes

Verify the specific suffix ENGRT confirms the passivated die form with solder bars as documented in official EPC datasheets. Ensure compatibility with surface-mount assembly processes suitable for bare die components. Confirm that the 16-week standard lead time aligns with project schedules. Validate that the 6LGA footprint matches the PCB layout requirements for thermal and electrical performance.

Selection Notes

Select this component for designs requiring high efficiency and compact size in low-voltage, high-current applications. The 100V rating suits 12V and 20V systems. Consider the 3.3mΩ typical resistance for minimizing heat generation. The bare die format requires careful thermal management and specialized mounting techniques compared to packaged alternatives.

Part Context

EPC2619 belongs to the eGaN FET family from EPC, designed for power conversion. It utilizes gallium nitride technology to achieve superior performance over silicon MOSFETs. The 6LGA package allows for dense PCB layouts. This part is intended for engineers developing advanced power supplies and motor drives where size and efficiency are critical constraints.