EPC7014UBC

$154.61

Description：GAN FET HEMT 60V 1A COTS 4UB
Series：e-GaN®
Mfr：EPC Space, LLC
Package：Bulk

SKU:c7edb13f5701 Category: Single FETs, MOSFETs Brand: EPC Space, LLC

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Product introduction

Product Detailed Parameters

Description：GAN FET HEMT 60V 1A COTS 4UB
Series：e-GaN®
Mfr：EPC Space, LLC
Package：Bulk
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id：2.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+7V, -4V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-SMD
Package / Case：4-SMD, No Lead

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EPC7014UBC

Overview

The EPC7014UBC is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by EPC Space, LLC. It features an N-channel configuration with a Drain-Source Voltage (V_DSS) rating of 60 V and a continuous Drain Current (I_D) of 1 A at case temperature. The device utilizes a lateral die structure to achieve exceptionally high electron mobility and a low temperature coefficient, resulting in low on-resistance values ranging from 340 mΩ to 580 mΩ. It is packaged in a compact 4-SMD surface-mount footprint designated as 4UB.

Feature Summary

Utilizes Gallium Nitride (GaN) HEMT technology for high electron mobility
Features a lateral die structure designed for low on-resistance
Exhibits a low temperature coefficient for stable performance

Applications

High-reliability critical applications
Radiation-hardened electronic systems
Surface-mount power switching circuits

Procurement Notes

Verify the specific suffix 'C' against official EPC Space documentation to confirm exact electrical tolerances and radiation hardness levels. Ensure the 4UB package dimensions match the target PCB layout. Confirm that the 60 V rating and 1 A current limits align with the system's thermal management capabilities under actual operating conditions.

Selection Notes

Select this component when a radiation-hardened GaN transistor is required for space or high-reliability environments. The 60 V rating suits low-voltage DC-DC conversion or load switching. Consider the 4UB package size for dense board layouts. Validate that the 340–580 mΩ resistance range meets efficiency requirements for the intended power level.

Part Context

This part belongs to the EPC7014 series of single FETs from EPC Space. The series includes variants such as the EPC7014UBSH. These devices are distinguished by their use of GaN technology rather than traditional silicon MOSFETs, offering advantages in electron mobility and thermal stability for specialized industrial and aerospace applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other EPC Space radiation-hardened GaN transistors only if official substitution lists are consulted.