EPC7018DC

$241.39

Description：MOSFET 2N-CH 100V 70A 4SMD
Series：eGaN®

SKU:0720e596e5f5 Category: FET, MOSFET Arrays Brand: EPC Space, LLC

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Product introduction

EPC7018DC is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists EPC Space, LLC. Its product description is MOSFET 2N-CH 100V 70A 4SMD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EPC7018DC

Description：MOSFET 2N-CH 100V 70A 4SMD
Series：eGaN®
Mfr：EPC Space, LLC
Package：Bulk
Technology：GaNFET (Gallium Nitride)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Rds On (Max) @ Id, Vgs：6.5mOhm @ 70A, 5V
Vgs(th) (Max) @ Id：2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 50V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：4-SMD
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for EPC7018DC

EPC7018DC

FET, MOSFET Arrays Overview

The EPC7018DC is a radiation-hardened eGaN power switching HEMT from the FSMD-D series, designed for high-reliability applications in space and critical environments. It features a 100V drain-source voltage (VDS) and supports a continuous drain current of 67A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 7.5 mΩ with a thermal resistance (RθJC) of 2.05 °C/W. Key gate parameters include a total gate charge (QG) of 20 nC and a gate-drain charge (QGD) of 12 nC. It utilizes a 4-SMD surface-mount package measuring 8.0 x 4.6 mm.

FET, MOSFET Arrays Feature Summary

Radiation-hardened design suitable for space and critical applications
High-efficiency switching capabilities via enhanced GaN technology
Low on-resistance for optimized power management

FET, MOSFET Arrays Applications

Space electronics systems
High reliability power switching
Critical environment power management

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet version provided by authorized distributors to confirm radiation hardness specifications and electrical tolerances. Ensure the 4-SMD package dimensions align with PCB layout requirements. Confirm that the component meets the necessary environmental standards for the intended operational context before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when radiation tolerance and high-frequency efficiency are required. The low RDS(on) and fast switching characteristics make it suitable for demanding power conversion tasks. Evaluate the thermal performance based on the specified RθJC value to ensure adequate heat dissipation within the target system constraints.

FET, MOSFET Arrays Part Context

The EPC7018DC belongs to the FSMD-D series of eGaN power switching HEMTs manufactured by EPC Space, LLC. This series is engineered specifically for high-reliability applications where standard components may fail due to harsh environmental conditions or radiation exposure.