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The EPC7019DC is a radiation-hardened enhancement-mode power transistor manufactured by EPC Space, LLC. It is classified as a GAN FET HEMT with a 40 V drain-source voltage rating and an 80 A continuous current capacity in commercial off-the-shelf (COTS) configurations. The device utilizes the FSMD-D surface mount package. Key electrical parameters include a maximum on-resistance of 5 mΩ and a breakdown voltage of 40 V. These components are assembled using processes identical to space-level parts but undergo reduced screening steps.
Verify the specific suffix 'DC' against the manufacturer's official datasheet to confirm the exact screening level and package variant. Ensure that the COTS designation aligns with project requirements, as it implies fewer burn-in hours than full space-grade parts. Confirm radiation tolerance specifications directly with EPC Space documentation before integration into critical flight hardware.
Select this component when radiation hardness is required but full space-level screening costs are prohibitive. Compare the 5 mΩ on-resistance against thermal management capabilities in the target application. Verify that the FSMD-D package fits the PCB layout constraints. Ensure the 40 V rating provides sufficient margin for the system's operating voltage under all expected transient conditions.
This part belongs to EPC Space's line of radiation-hardened power transistors. It shares manufacturing processes with higher-tier space-grade devices but offers a cost-effective alternative through COTS screening protocols. The series includes variants like the EPC7019, which may differ in specific parameter tolerances or screening depths.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with EPC Space's official replacement guide or contact the manufacturer directly for qualified alternatives.