EPC8004

$3.65

Description：GANFET N-CH 40V 4A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b7059857edca Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 40V 4A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：110mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.45 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：52 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC8004

Overview

The EPC8004 is an enhancement mode Gallium Nitride Field Effect Transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a normally-off configuration with a maximum drain-source voltage rating of 40 V and a continuous drain current capability of 4 A at the case temperature limit. The device utilizes a surface-mount package designed for high-frequency power switching applications, offering low on-resistance and minimal gate charge characteristics inherent to the eGaN technology platform.

Feature Summary

Enhancement mode (normally-off) operation ensuring safe default state
Integration of eGaN technology for reduced switching losses
Surface-mount packaging optimized for thermal performance

Applications

Evaluation as part of the EPC9066 half-bridge development board
High-efficiency DC-DC converter stages
Synchronous rectification in power supply designs

Procurement Notes

Verify the specific tape-and-reel quantity or cut-tape availability directly with the manufacturer or authorized distributors before ordering. Confirm that the component meets RoHS3 compliance requirements for your assembly process. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage prior to soldering.

Selection Notes

Select this component when a 40 V rated, normally-off GaN transistor is required for compact power stages. Consider the 4 A current rating against your peak load requirements. Evaluate the thermal management needs based on the specific package type and expected operating junction temperatures within your circuit design constraints.

Part Context

The EPC8004 serves as the primary active switching element in the EPC9066 evaluation board, which demonstrates a half-bridge configuration. It is part of the broader eGaN family of devices, designed to replace traditional silicon MOSFETs in applications demanding higher efficiency and switching frequencies. Its integration allows for simplified driver design due to fast switching speeds.