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Product Detailed Parameters
- Description：GANFET N-CH 100V 4A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：160mOhm @ 500mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.48 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：55 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC8010 is a 100 V rated enhancement-mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It is designed for high-efficiency power conversion applications, specifically serving as an asynchronous bootstrap FET in Class-D amplifier circuits. The device operates within the Low ISM band frequency range, supporting wireless power transfer systems compliant with A4WP standards.
Feature Summary
- Enhancement-mode gallium nitride technology providing high efficiency and low switching losses
- 100 V breakdown voltage rating suitable for robust power stage operation
- Integrated into differential mode Zero Voltage Switching Class-D amplifier topologies
Applications
- Asynchronous bootstrap FET in ZVS Class-D amplifiers
- A4WP wireless power transfer development boards
- Low ISM band resonant converter evaluation platforms
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and datasheet revision status prior to integration. Ensure handling procedures comply with electrostatic discharge protection guidelines for wide-bandgap semiconductor devices.
Selection Notes
Select this component when designing high-frequency resonant converters requiring low gate charge and fast switching characteristics. Evaluate thermal management requirements based on the specific board layout and heat sink configuration used in the target application circuit.
Part Context
This device is part of the eGaN FET family from Efficient Power Conversion, optimized for high-power density applications. It complements other series components like the EPC2007C in complete amplifier solutions, offering superior performance compared to traditional silicon MOSFETs in high-frequency switching environments.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer engineering support for cross-reference recommendations if original supply is unavailable.
