ES6U3T2CR

Overview

The ES6U3T2CR is a dual-function semiconductor device integrating an N-channel MOSFET with an integrated Schottky Barrier Diode (SBD). Manufactured by ROHM Semiconductor, it utilizes silicon technology and is housed in a WEMT6 package, which corresponds to the SOT-563-6 form factor. The component features a drain-source voltage rating of 30 V and supports a continuous drain current of 1.4 A. It is designed for low-voltage drive applications, specifically optimized for 4 V gate drive conditions. Key electrical characteristics include a typical on-resistance of 0.27 Ω at 4 V gate drive and a total gate charge of 1.4 nC. The integrated diode offers a reverse voltage of 20 V and a forward current of 0.5 A.

Feature Summary

• Integrates an N-channel MOSFET and a Schottky Barrier Diode within a single compact surface-mount package.
• Optimized for low-voltage drive applications with specific performance tuning for 4 V gate drive conditions.
• Features a small footprint design utilizing the WEMT6 (SOT-563) package configuration.

Applications

• Low-side switching in DC-DC converter circuits
• Synchronous rectification in power supply modules
• Motor driver output stages

Procurement Notes

Verify the manufacturing status before procurement planning, as this specific part number may be classified as obsolete or not recommended for new designs. Confirm availability through authorized distributors or secondary market channels if standard supply chains do not list active stock. Ensure that the WEMT6/SOT-563 package compatibility matches your PCB footprint requirements. Cross-reference the datasheet revision to confirm pinout consistency if replacing existing components in established designs.

Selection Notes

Select this component when a combined MOSFET and freewheeling diode solution is required in a minimal space-constrained environment. The 4 V drive optimization makes it suitable for logic-level control interfaces without requiring high gate voltages. Consider the 30 V breakdown voltage and 1.4 A current capacity against your circuit's peak load requirements. The integrated Schottky diode eliminates the need for external parallel diodes, simplifying the bill of materials and reducing thermal management complexity compared to discrete solutions.

Part Context

This device belongs to ROHM's portfolio of integrated power transistors designed for efficiency and size reduction. The ES6U3 series specifically targets applications where space savings and simplified circuit topology are critical. By combining the switching element and the body/freewheeling diode into one package, it reduces parasitic inductance and improves switching performance compared to discrete arrangements.

Replacement Considerations

Publicly confirmed substitute part numbers include 1SS356VM and 1SS356VMFH, though these are distinct diode types and require careful functional verification. No direct equivalent N-MOSFET+SBD replacement was identified in the provided data.